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Creators/Authors contains: "ER Brown, WD Zhang"

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  1. (, ArXiv.org)
    We report strong light emission from a room-temperature n-type unipolar In0.53Ga0.47As/AlAs double-barrier resonant-tunneling diode (DBRTD) precisely at the In0.53Ga0.47As band-edge near 1650 nm. The emission characteristics are very similar to what we have observed recently in GaN/AlN DBRTDs, both of which suggest that the mechanism for emission is cross-gap electron-hole recombination via resonant- and Zener co-tunneling of electrons, the latter mechanism generating the required holes. Analysis shows that because of the relatively small bandgap, the Zener tunneling probability can be large in this In0.53Ga0.47As/AlAs DBRTD and is a mechanism that may have been overlooked in the longstanding literature. 
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